 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2N3663 Discrete POWER & Signal Technologies 2N3663 E CB TO-92 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 12 30 3.0 50 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3663 350 2.8 125 357 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N3663 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, IE = 0 I E = 100 A, I C = 0 VCB = 15 V, IE = 0 VEB = 2.0 V, I C = 0 12 30 3.0 0.5 0.5 V V V A A ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 8.0 mA 20 SMALL SIGNAL CHARACTERISTICS fT Cob rb'CC Current Gain - Bandwidth Product Output Capacitance Collector Base Time Constant IC = 5.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz IC = 8.0 mA, VCE = 10 V, f = 79.8 MHz 700 0.8 2100 1.7 80 MHz pF pS FUNCTIONAL TEST NF Gpe Noise Figure Amplifier Power Gain IC = 1.0 mA, VCE = 6.0 V, f = 60 MHz, Rg = 400 IC = 6.0 mA, VCE = 12 V, f = 200 MHz 6.5 1.5 dB dB *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
Price & Availability of 2N3663
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |